Taiwan Semi N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 TSM2306CX RFG
- RS Stock No.:
- 169-9279
- Mfr. Part No.:
- TSM2306CX RFG
- Brand:
- Taiwan Semiconductor
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
$1,140.00
(exc. GST)
$1,320.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- 9,000 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | $0.38 | $1,140.00 |
| 6000 - 9000 | $0.37 | $1,110.00 |
| 12000 + | $0.365 | $1,095.00 |
*price indicative
- RS Stock No.:
- 169-9279
- Mfr. Part No.:
- TSM2306CX RFG
- Brand:
- Taiwan Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 94 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 4.2 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 3.1mm | |
| Width | 1.7mm | |
| Height | 1.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 94 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.2 nC @ 10 V | ||
Transistor Material Si | ||
Length 3.1mm | ||
Width 1.7mm | ||
Height 1.2mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET, Taiwan Semiconductor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Taiwan Semiconductor
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