- RS Stock No.:
- 178-3697
- Mfr. Part No.:
- SiSH617DN-T1-GE3
- Brand:
- Vishay Siliconix
Discontinued product
- RS Stock No.:
- 178-3697
- Mfr. Part No.:
- SiSH617DN-T1-GE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® power MOSFET
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 35 A |
Maximum Drain Source Voltage | 30 V |
Package Type | 1212 |
Series | TrenchFET |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 20 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 52 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±25 V |
Width | 3.15mm |
Number of Elements per Chip | 1 |
Length | 3.15mm |
Typical Gate Charge @ Vgs | 39 nC @ 10 V |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Forward Diode Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
Height | 1.07mm |