N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3
- RS Stock No.:
- 178-3698
- Mfr. Part No.:
- SiSS02DN-T1-GE3
- Brand:
- Vishay Siliconix
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Added
Price (ex. GST) Each (On a Reel of 3000)
$1.166
(exc. GST)
$1.341
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 - 12000 | $1.166 | $3,498.00 |
| 15000 + | $1.049 | $3,147.00 |
| *price indicative | ||
- RS Stock No.:
- 178-3698
- Mfr. Part No.:
- SiSS02DN-T1-GE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
FEATURES
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally
enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
APPLICATIONS
Synchronous rectification
Synchronous buck converter
High power density DC/DC
OR-ing
Load switching
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally
enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
APPLICATIONS
Synchronous rectification
Synchronous buck converter
High power density DC/DC
OR-ing
Load switching
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 25 V |
| Series | TrenchFET |
| Package Type | 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 1 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 65.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +16 V |
| Maximum Operating Temperature | +150 °C |
| Width | 3.15mm |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 3.15mm |
| Forward Diode Voltage | 1.1V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.07mm |