SQA401EEJ-T1_GE3 P-Channel MOSFET, 2.68 A, 20 V TrenchFET, 6-Pin SC-70 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® power MOSFET

Attribute Value
Channel Type P
Maximum Continuous Drain Current 2.68 A
Maximum Drain Source Voltage 20 V
Package Type SC-70
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 200 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.5V
Minimum Gate Threshold Voltage 0.6V
Maximum Power Dissipation 13.6 W
Transistor Configuration Single
Maximum Gate Source Voltage ±8 V
Number of Elements per Chip 1
Width 1.35mm
Length 2.2mm
Forward Diode Voltage 1.2V
Series TrenchFET
Height 1mm
Typical Gate Charge @ Vgs 4.2 nC @ 4.5 V
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Transistor Material Si
Automotive Standard AEC-Q101
3000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 0.658
(exc. GST)
$ 0.757
(inc. GST)
Per unit
100 - 475
500 - 975
1000 +
Packaging Options: