SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS - Qoss

Attribute Value
Channel Type N
Maximum Continuous Drain Current 12 A
Maximum Drain Source Voltage 100 V
Package Type SC-70
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 70 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 19 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 1.35mm
Height 1mm
Maximum Operating Temperature +150 °C
Transistor Material Si
Series TrenchFET
Typical Gate Charge @ Vgs 8.5 nC @ 10 V
Forward Diode Voltage 1.2V
Length 2.2mm
5990 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 1.25
(exc. GST)
$ 1.44
(inc. GST)
Per unit
50 - 90
100 - 490
500 - 990
1000 +
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