SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS - Qoss

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 12 A
Maximum Drain Source Voltage 100 V
Maximum Drain Source Resistance 70 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage ±20 V
Package Type SC-70
Mounting Type Surface Mount
Transistor Configuration Single
Pin Count 6
Channel Mode Enhancement
Maximum Power Dissipation 19 W
Number of Elements per Chip 1
Width 1.35mm
Minimum Operating Temperature -55 °C
Forward Diode Voltage 1.2V
Length 2.2mm
Transistor Material Si
Typical Gate Charge @ Vgs 8.5 nC @ 10 V
Height 1mm
Series TrenchFET
Maximum Operating Temperature +150 °C
6000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 1.25
(exc. GST)
$ 1.44
(inc. GST)
units
Per unit
50 - 90
$1.25
100 - 490
$1.05
500 - 990
$0.92
1000 +
$0.72
Packaging Options: