Nexperia P-Channel MOSFET, 200 mA, 240 V, 3-Pin SOT-89 BSS192,115

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RS Stock No.:
178-7048
Mfr. Part No.:
BSS192,115
Brand:
Nexperia
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Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

240 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

4.6mm

Maximum Operating Temperature

+150 °C

Width

2.6mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.6mm

P-Channel MOSFET, Nexperia


The Nexperia a BSS192 is a P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package.

Direct interface to Complementary (C-MOS) transitory and Transistor-Transistor Logic (TTL) devices
Very fast switching
No secondary breakdown

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



MOSFET Transistors, NXP Semiconductors