Vishay TrenchFET Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252

This image is representative of the product range

Unavailable
RS will no longer stock this product.
RS Stock No.:
180-7402
Distrelec Article No.:
303-97-244
Mfr. Part No.:
SQD50P06-15L_GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

136W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

98nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.5V

Maximum Operating Temperature

175°C

Length

10.41mm

Standards/Approvals

No

Width

6.73 mm

Height

2.38mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
TW

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• Package with low thermal resistance

• TrenchFET power MOSFET

Applications


• Adaptor switch

• Load switches

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

Related links