P-Channel MOSFET, 7.6 A, 30 V, 3-Pin SOT-23 Vishay SI2369DS-T1-GE3

RS Stock No.:: 180-7798
Mfr. Part No.:: SI2369DS-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 7.6 A, 30 V, 3-Pin SOT-23 Vishay SI2369DS-T1-GE3

200 In stock for delivery within 7 working day(s)

Added

Price (ex. GST) Each (In a Pack of 25)

$0.612

(exc. GST)

$0.704

(inc. GST)

Units	Per unit	Per Pack*
25 - 725	$0.612	$15.30
750 - 1475	$0.597	$14.925
1500 +	$0.588	$14.70
*price indicative

RS Stock No.:: 180-7798
Mfr. Part No.:: SI2369DS-T1-GE3
Brand:: Vishay

Technical data sheets

Datasheet

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source resistance of 29mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 30V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 7.6A and maximum power dissipation of 2.5W. MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications

• DC/DC converter
• For mobile computing
• Load switch
• Notebook adaptor switch

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	7.6 A
Maximum Drain Source Voltage	30 V
Series	TrenchFET
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	0.04 O
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Number of Elements per Chip	1