Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

$205.10

(exc. GST)

$235.875

(inc. GST)

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Units
Per unit
Per Tube*
25 - 25$8.204$205.10
50 - 75$8.049$201.23
100 +$7.876$196.90

*price indicative

RS Stock No.:
220-7344
Mfr. Part No.:
AUIRFP4110
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

370W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.87mm

Standards/Approvals

No

Width

20.7 mm

Height

5.31mm

Automotive Standard

AEC-Q101

The Infineon AUIRFP4110 specifically designed for Automotive applications, this HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance

175°C operating temperature

Fast switching

Repetitive avalanche allowed up to Tjmax

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