onsemi NTBGS1D Type N-Channel MOSFET, 267 A, 60 V Enhancement, 7-Pin TO-263
- RS Stock No.:
- 221-6699
- Mfr. Part No.:
- NTBGS1D5N06C
- Brand:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 221-6699
- Mfr. Part No.:
- NTBGS1D5N06C
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 267A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTBGS1D | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.55mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 211W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Width | 4.7 mm | |
| Standards/Approvals | RoHS | |
| Height | 15.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 267A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTBGS1D | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.55mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 211W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Width 4.7 mm | ||
Standards/Approvals RoHS | ||
Height 15.7mm | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 267A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
Related links
- onsemi NTBGS1D Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 NTBGS1D5N06C
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 7-Pin TO-263
- onsemi NTBGS Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 NTBG022N120M3S
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 7-Pin TO-263 FDB024N08BL7
- onsemi NTBGS Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 NTBGS001N06C
- onsemi NTB Type N-Channel MOSFET & Diode 1200 V Enhancement, 7-Pin TO-263