Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

$65.75

(exc. GST)

$75.60

(inc. GST)

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In Stock
  • 850 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
50 - 50$1.315$65.75
100 - 450$1.275$63.75
500 - 950$1.237$61.85
1000 - 1950$1.20$60.00
2000 +$1.164$58.20

*price indicative

RS Stock No.:
228-2839
Mfr. Part No.:
SiHA5N80AE-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

11nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

29W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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