Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3

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Subtotal (1 pack of 5 units)*

$18.22

(exc. GST)

$20.955

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45$3.644$18.22
50 - 95$3.534$17.67
100 - 245$3.422$17.11
250 - 995$3.318$16.59
1000 +$3.224$16.12

*price indicative

Packaging Options:
RS Stock No.:
228-2902
Mfr. Part No.:
SiR500DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

350.8A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.47mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

120nC

Maximum Power Dissipation Pd

104.1W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 30 V MOSFET.

100 % Rg and UIS tested

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