Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISC011N06LM5ATMA1
- RS Stock No.:
- 233-4393
- Mfr. Part No.:
- ISC011N06LM5ATMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$39.83
(exc. GST)
$45.805
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 4,930 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | $7.966 | $39.83 |
| 10 - 95 | $7.806 | $39.03 |
| 100 - 245 | $7.652 | $38.26 |
| 250 - 495 | $7.502 | $37.51 |
| 500 + | $7.354 | $36.77 |
*price indicative
- RS Stock No.:
- 233-4393
- Mfr. Part No.:
- ISC011N06LM5ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 288A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ISC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.89kW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Height | 5.35mm | |
| Width | 1.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 288A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ISC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.89kW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Height 5.35mm | ||
Width 1.2 mm | ||
Automotive Standard No | ||
The Infineon MOSFET in the SuperSO8 package extends the OptiMOS 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. It has low reverse recovery charge (Qrr) which improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Higher operating temperature rating to 175°C
Superior thermal performance
Related links
- Infineon ISC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon ISC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON ISZ034N06LM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon ISC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON ISC012N04LM6ATMA1
- Infineon ISC Type N-Channel OptiMOST Power-MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8
- Infineon ISC Type N-Channel N-Channel Mosfet 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
