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Infineon F4 Quad SiC N-Channel MOSFET Module, 100 A, 1200 V AG-EASY2B F411MR12W2M1B76BOMA1

RS Stock No.:: 234-8960
Mfr. Part No.:: F411MR12W2M1B76BOMA1
Brand:: Infineon

Infineon F4 Quad SiC N-Channel MOSFET Module, 100 A, 1200 V AG-EASY2B F411MR12W2M1B76BOMA1

Bulk discount available

Subtotal (1 tray of 15 units)*

$9,333.765

(exc. GST)

$10,733.835

(inc. GST)

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Units	Per unit	Per Tray*
15 - 15	$622.251	$9,333.77
30 - 30	$591.139	$8,867.09
45 +	$561.583	$8,423.75

*price indicative

RS Stock No.:: 234-8960
Mfr. Part No.:: F411MR12W2M1B76BOMA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	100 A
	Maximum Drain Source Voltage	1200 V
	Series	F4
	Package Type	AG-EASY2B
	Mounting Type	Screw Mount
	Maximum Drain Source Resistance	0.0113 Ω
	Maximum Gate Threshold Voltage	5.55V
	Number of Elements per Chip	4
	Transistor Material	SiC

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 100 A
	Maximum Drain Source Voltage 1200 V
	Series F4
	Package Type AG-EASY2B
	Mounting Type Screw Mount
	Maximum Drain Source Resistance 0.0113 Ω
	Maximum Gate Threshold Voltage 5.55V
	Number of Elements per Chip 4
	Transistor Material SiC

Datasheet - F411MR12W2M1B76BOMA1

The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 100A continuous drain current.

Chassis mount
-40°C to 150°C operating temperature

Infineon F4 Quad SiC N-Channel MOSFET Module, 100 A, 1200 V AG-EASY2B F411MR12W2M1B76BOMA1

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