Infineon Dual OptiMOS Type N-Channel MOSFET, 20 A, 55 V Enhancement, 8-Pin TDSON
- RS Stock No.:
- 258-3876
- Mfr. Part No.:
- IPG20N06S2L35AATMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
$5,115.00
(exc. GST)
$5,880.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 20,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | $1.023 | $5,115.00 |
| 10000 - 10000 | $0.92 | $4,600.00 |
| 15000 + | $0.828 | $4,140.00 |
*price indicative
- RS Stock No.:
- 258-3876
- Mfr. Part No.:
- IPG20N06S2L35AATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS power-transistor is dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Larger source lead frame connection for wire bonding and same thermal and electrical performance as a DPAK with the same die size.
Dual N-channel Logic Level - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
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