N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

RS Stock No.:: 541-0014P
Mfr. Part No.:: IRF640NPBF
Brand:: Infineon

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

Discontinued product

Alternative

This product is not currently available. Here is our alternative recommendation.

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

RS Stock No.: 919-4817

Each (In a Tube of 50)

$1.533

(exc. GST)

$1.763

(inc. GST)

RS Stock No.:: 541-0014P
Mfr. Part No.:: IRF640NPBF
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	67 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Height	8.77mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

Alternative

N-Channel Power MOSFET 150V to 600V, Infineon