P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB Infineon IRF9540NPBF

RS Stock No.:: 541-1225
Mfr. Part No.:: IRF9540NPBF
Brand:: Infineon

P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB Infineon IRF9540NPBF

54 in Global stock for delivery within 1 working day (+3 days for regional areas).

846 in Global stock for delivery within 7 working day (+3 days for regional areas).

Added

Price (ex. GST) Each

$3.07

(exc. GST)

$3.53

(inc. GST)

Units	Per unit
1 - 12	$3.07
13 - 64	$3.02
65 +	$2.48

RS Stock No.:: 541-1225
Mfr. Part No.:: IRF9540NPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	23 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	117 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	140 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	97 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	8.77mm