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Toshiba 2SK Type N-Channel Field Effect Transistor, 10 A, 100 V Enhancement, 3-Pin 2SK3669(Q)

RS Stock No.:: 601-2116
Mfr. Part No.:: 2SK3669(Q)
Brand:: Toshiba

Toshiba 2SK Type N-Channel Field Effect Transistor, 10 A, 100 V Enhancement, 3-Pin 2SK3669(Q)

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Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 601-2116
Mfr. Part No.:: 2SK3669(Q)
Brand:: Toshiba

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	Type N
	Product Type	Field Effect Transistor
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	100V
	Series	2SK
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.7V
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	8nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	6.5mm
	Width	5.5 mm
	Height	2.3mm
	Automotive Standard	No

	Select all
	Brand Toshiba
	Channel Type Type N
	Product Type Field Effect Transistor
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 100V
	Series 2SK
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.7V
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 8nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 6.5mm
	Width 5.5 mm
	Height 2.3mm
	Automotive Standard No

COO (Country of Origin):: JP

Toshiba 2SK Type N-Channel Field Effect Transistor, 10 A, 100 V Enhancement, 3-Pin 2SK3669(Q)

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