MPN

Toshiba 2SK Type N-Channel Field Effect Transistor, 10 A, 100 V Enhancement, 3-Pin 2SK3669(Q)

RS Stock No.:: 601-2116
Mfr. Part No.:: 2SK3669(Q)
Brand:: Toshiba

Toshiba 2SK Type N-Channel Field Effect Transistor, 10 A, 100 V Enhancement, 3-Pin 2SK3669(Q)

This image is representative of the product range

Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 601-2116
Mfr. Part No.:: 2SK3669(Q)
Brand:: Toshiba

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Product Type	Field Effect Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	100V
	Series	2SK
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	8nC
	Forward Voltage Vf	1.7V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Width	5.5 mm
	Height	2.3mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Toshiba
	Product Type Field Effect Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 100V
	Series 2SK
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 8nC
	Forward Voltage Vf 1.7V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Width 5.5 mm
	Height 2.3mm
	Standards/Approvals RoHS
	Automotive Standard No

COO (Country of Origin):: JP

Toshiba 2SK Type N-Channel Field Effect Transistor, 10 A, 100 V Enhancement, 3-Pin 2SK3669(Q)

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

Related links