Toshiba 2SK N-Channel MOSFET, 5 A, 900 V, 3-Pin TO-3PN 2SK3700(F)
- RS Stock No.:
- 601-2122
- Mfr. Part No.:
- 2SK3700(F)
- Brand:
- Toshiba
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- RS Stock No.:
- 601-2122
- Mfr. Part No.:
- 2SK3700(F)
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 900 V | |
| Package Type | TO-3PN | |
| Series | 2SK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.8mm | |
| Typical Gate Charge @ Vgs | 28 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 15.9mm | |
| Transistor Material | Si | |
| Height | 19mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type TO-3PN | ||
Series 2SK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.8mm | ||
Typical Gate Charge @ Vgs 28 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 15.9mm | ||
Transistor Material Si | ||
Height 19mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
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