Infineon HEXFET N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB IRFB4127PBF

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Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
688-6936P
Mfr. Part No.:
IRFB4127PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

100 nC @ 10 V

Length

10.67mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.02mm

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard through-hole power package

High-current rating

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available

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