N-Channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC Infineon IRFP4768PBF
- RS Stock No.:
- 688-7020
- Mfr. Part No.:
- IRFP4768PBF
- Brand:
- Infineon
997 In stock for delivery within 7 working day(s)
Added
Price (ex. GST) Each
$10.24
(exc. GST)
$11.78
(inc. GST)
| Units | Per unit |
| 1 - 6 | $10.24 |
| 7 + | $10.12 |
- RS Stock No.:
- 688-7020
- Mfr. Part No.:
- IRFP4768PBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 93 A |
| Maximum Drain Source Voltage | 250 V |
| Package Type | TO-247AC |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 14.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 520 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Width | 5.31mm |
| Length | 15.87mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V |
| Transistor Material | Si |
| Height | 20.7mm |
| Minimum Operating Temperature | -55 °C |