FDMS3602S Dual N-Channel MOSFET, 30 A, 40 A, 25 V PowerTrench, 8-Pin Power 56 ON Semiconductor

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Product Details

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Attribute Value
Channel Type N
Maximum Continuous Drain Current 30 A, 40 A
Maximum Drain Source Voltage 25 V
Package Type Power 56
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 3.9 mΩ, 8.7 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 2.2 W, 2.5 W
Transistor Configuration Series
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Minimum Operating Temperature -55 °C
Length 5mm
Width 6mm
Series PowerTrench
Maximum Operating Temperature +150 °C
Height 1.05mm
Transistor Material Si
Typical Gate Charge @ Vgs 19 nC @ 10 V, 45 nC @ 10 V
130 In stock for delivery within 5 working day(s)
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