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MOSFETs
P-Channel MOSFET, 120 A, 60 V, 4-Pin IPAK Renesas 2SJ601-AZ
RS Stock No.:
772-5258
Mfr. Part No.:
2SJ601-AZ
Brand:
Renesas Electronics
This image is representative of the product range
View all MOSFETs
Discontinued product
RS Stock No.:
772-5258
Mfr. Part No.:
2SJ601-AZ
Brand:
Renesas Electronics
Technical data sheets
Legislation and Compliance
Product Details
Specifications
Silicon P Channel MOSFET 2SJ601 Data Sheet
Package Difference between 2S*****-AZ and 2S*****-Z-AZ
ESD Control Selection Guide V1
Group 6
3D
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RoHS Certificate of Compliance
Statement of conformity
P-Channel MOSFET, Renesas Electronics (NEC)
MOSFET Transistors, Renesas Electronics (NEC)
Attribute
Value
Channel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Length
6.5mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Height
2.3mm