N-Channel MOSFET, 70 A, 300 V, 3-Pin TO-247AC Infineon IRFP4868PBF
- RS Stock No.:
- 784-8947
- Mfr. Part No.:
- IRFP4868PBF
- Brand:
- Infineon
2 in Global stock for delivery within 1 working day (+3 days for regional areas).
14 in Global stock for delivery within 7 working day (+3 days for regional areas).
Added
Price (ex. GST) Each
Was $12.46
You pay
$11.62
(exc. GST)
$13.36
(inc. GST)
| Units | Per unit |
| 1 - 9 | $11.62 |
| 10 + | $11.39 |
- RS Stock No.:
- 784-8947
- Mfr. Part No.:
- IRFP4868PBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 70 A |
| Maximum Drain Source Voltage | 300 V |
| Package Type | TO-247AC |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 32 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 517 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V |
| Width | 5.31mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 15.87mm |
| Height | 20.7mm |
| Minimum Operating Temperature | -55 °C |