Vishay TrenchFET Type N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

$14.55

(exc. GST)

$16.73

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 05 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 740$1.455$14.55
750 +$1.45$14.50

*price indicative

Packaging Options:
RS Stock No.:
787-9409
Mfr. Part No.:
SISA10DN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

39W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.4mm

Standards/Approvals

No

Width

3.4 mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links