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Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80N04S404ATMA1

RS Stock No.:: 826-9480
Mfr. Part No.:: IPB80N04S404ATMA1
Brand:: Infineon

Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80N04S404ATMA1

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RS Stock No.:: 826-9480
Mfr. Part No.:: IPB80N04S404ATMA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	40 V
	Package Type	D2PAK (TO-263)
	Series	OptiMOS™ -T2
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	4.6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	71 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	9.25mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	10mm
	Typical Gate Charge @ Vgs	33 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	4.4mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 40 V
	Package Type D2PAK (TO-263)
	Series OptiMOS™ -T2
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 4.6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 71 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 9.25mm
	Transistor Material Si
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 10mm
	Typical Gate Charge @ Vgs 33 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 4.4mm

RoHS Status: Not Applicable

Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80N04S404ATMA1

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