P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS9342TRPBF

RS Stock No.:: 907-5151P
Mfr. Part No.:: IRFTS9342TRPBF
Brand:: Infineon

P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS9342TRPBF

This image is representative of the product range

Bulk discount available

Subtotal (15 reels of 50 units)**. Quantities below 150 on continuous strip

$633.00

(exc. GST)

$728.25

(inc. GST)

2350 In stock for delivery within 7 working day(s)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over $80 ex GST

Units	Per unit
750 - 1450	$0.759
1500 +	$0.683

**price indicative

RS Stock No.:: 907-5151P
Mfr. Part No.:: IRFTS9342TRPBF
Brand:: Infineon

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 5.8A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRFTS9342TRPBF

This MOSFET is designed for high efficiency across various applications, playing a critical role in electronic circuits that require enhanced performance and dependability. Its low on-resistance and significant current-handling capabilities contribute to energy efficiency and system stability in automation and electrical applications.

Features & Benefits

• Low Rds(on) improves energy efficiency
• Continuous drain current support of 5.8 A for effective performance
• Maximum drain-source voltage of 30 V ensures durability
• Surface mount design allows for compact, efficient layouts
• Operating temperature range of -55°C to +150°C enhances adaptability

Applications

• Used in battery-operated DC motor inverters
• Employed for system or load switching in varied circuits
• Applicable for drive operations within automation systems
• Utilised in power management systems for improved efficiency

How does this component perform under extreme temperatures?

It operates effectively within a wide temperature range from -55°C to +150°C, ensuring dependability in various environments.

What is the benefit of the low on-resistance feature?

A low Rds(on) value decreases power loss in applications, leading to enhanced overall efficiency and thermal performance.

Can this device handle pulsed currents?

Yes, it can manage pulsed drain currents effectively, making it suitable for dynamic applications in electronics.

How is it mounted in circuits?

The device is designed for surface mount applications, facilitating compact assembly and efficient space utilisation on PCBs.

What considerations should be taken when handling this component?

Users should ensure proper handling due to its sensitivity to voltage levels, adhering to specified maximum gate-source voltage limits.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Voltage	30 V
Package Type	TSOP
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	66 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.4V
Minimum Gate Threshold Voltage	1.3V
Maximum Power Dissipation	2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	1.75mm
Transistor Material	Si
Length	3mm
Typical Gate Charge @ Vgs	12 nC @ 10 V
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	1.3mm