MPN

onsemi MJ11016G 1 Darlington Transistor NPN, 30 A 120 V HFE:200, 3-Pin TO-204

RS Stock No.:: 463-000
Distrelec Article No.:: 304-37-286
Mfr. Part No.:: MJ11016G
Brand:: onsemi

onsemi MJ11016G 1 Darlington Transistor NPN, 30 A 120 V HFE:200, 3-Pin TO-204

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Bulk discount available

Subtotal (1 pack of 2 units)*

$22.21

(exc. GST)

$25.542

(inc. GST)

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Units	Per unit	Per Pack*
2 - 24	$11.105	$22.21
26 - 128	$10.55	$21.10
130 +	$10.025	$20.05

*price indicative

RS Stock No.:: 463-000
Distrelec Article No.:: 304-37-286
Mfr. Part No.:: MJ11016G
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Darlington Transistor
	Maximum Continuous Collector Current Ic	30A
	Maximum Collector Emitter Voltage Vceo	120V
	Package Type	TO-204
	Mount Type	Through Hole
	Pin Count	3
	Number of Elements per Chip	1
	Minimum DC Current Gain hFE	200
	Maximum Collector Base Voltage VCBO	120V
	Maximum Power Dissipation Pd	200W
	Maximum Emitter Base Voltage VEBO	5V
	Transistor Polarity	NPN
	Minimum Operating Temperature	-55°C
	Maximum Collector Emitter Saturation Voltage VceSAT	4V
	Maximum Operating Temperature	200°C
	Length	39.37mm
	Series	MJ1101
	Standards/Approvals	No
	Height	8.51mm
	Width	26.67 mm
	Maximum Collector Cut-off Current	1mA
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Darlington Transistor
	Maximum Continuous Collector Current Ic 30A
	Maximum Collector Emitter Voltage Vceo 120V
	Package Type TO-204
	Mount Type Through Hole
	Pin Count 3
	Number of Elements per Chip 1
	Minimum DC Current Gain hFE 200
	Maximum Collector Base Voltage VCBO 120V
	Maximum Power Dissipation Pd 200W
	Maximum Emitter Base Voltage VEBO 5V
	Transistor Polarity NPN
	Minimum Operating Temperature -55°C
	Maximum Collector Emitter Saturation Voltage VceSAT 4V
	Maximum Operating Temperature 200°C
	Length 39.37mm
	Series MJ1101
	Standards/Approvals No
	Height 8.51mm
	Width 26.67 mm
	Maximum Collector Cut-off Current 1mA
	Automotive Standard No

The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.

The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain

• Monolithic Construction

• Built-in Base Emitter Shunt Resistor

• Junction Temperature: to +200°C

• NPN Polarity

Versions Available:

463-000 - pack of 2

100-7565 - tray of 100

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

onsemi MJ11016G 1 Darlington Transistor NPN, 30 A 120 V HFE:200, 3-Pin TO-204

NPN Darlington Transistors, ON Semiconductor

Standards

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