ON Semi 100V 5A, Diode, 2-Pin DO-201AD SB5100

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

ON Semi SB520-SB5100 Schottky Rectifiers

From ON Semiconductor, the SB5200-SB5100 range of Schottky diodes are a metal to silicon rectifier. They are high efficiency and feature low power loss.

Features and Benefits

• Average forward rectified current of 5 A
• Wide storage and operating temperature range of -50 °C to +150 °C
• High surge capacity
• Glass passivated, decreasing the risk of leakage.

Product Applications

These Schottky diodes are suitable for general usage. Example uses include polarity protection applications and free-wheeling low voltage high frequency inverters.

Specifications
Attribute Value
Mounting Type Through Hole
Package Type DO-201AD
Maximum Continuous Forward Current 5A
Peak Reverse Repetitive Voltage 100V
Diode Configuration Single
Diode Type Schottky
Pin Count 2
Maximum Forward Voltage Drop 850mV
Number of Elements per Chip 1
Diode Technology Schottky
Diameter 5.6mm
Peak Non-Repetitive Forward Surge Current 150A
1250 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 1250)
$ 0.655
(exc. GST)
$ 0.753
(inc. GST)
units
Per unit
Per Reel*
1250 - 2500
$0.655
$818.75
3750 - 5000
$0.622
$777.50
6250 +
$0.593
$741.25
*price indicative
Related Products
This ON Semiconductor Schottky power rectifier employs the ...
Description:
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in ...
FEATURES• Low profile package• Ideal for automated placement• ...
Description:
FEATURES• Low profile package• Ideal for automated placement• Glass passivated pellet chip junction• Ultrafast recovery times for high efficiency• Low forward voltage, low power losses• High forward surge capability• Meets MSL level 1, per J-STD-020, LF maximum peakof 260 ...
Features• Glass passivated chip junction,• Ultrafast reverse recovery ...
Description:
Features• Glass passivated chip junction,• Ultrafast reverse recovery time,• Low forward voltage drop,• Low switching losses, high efficiency,• High forward surge capability,• Solder dip 275 °C max. 10 s, per JESD 22-B106,Typical Applications. For use in high frequency rectification ...
This ON Semiconductor Schottky power rectifier employs the ...
Description:
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in ...