Infineon 1200V 31.9A, Diode, 2+Tab-Pin TO-220 IDH10G120C5XKSA1

  • RS Stock No. 133-8556
  • Mfr. Part No. IDH10G120C5XKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

Specifications
Attribute Value
Mounting Type Through Hole
Package Type TO-220
Maximum Continuous Forward Current 31.9A
Peak Reverse Repetitive Voltage 1200V
Diode Configuration Single
Diode Type SiC Schottky
Pin Count 2 + Tab
Maximum Forward Voltage Drop 2.6V
Number of Elements per Chip 1
Diode Technology SiC Schottky
Peak Non-Repetitive Forward Surge Current 99A
On back order for despatch 20/11/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (In a Tube of 500)
Was $10.525
$ 7.16
(exc. GST)
$ 8.23
(inc. GST)
units
Per unit
Per Tube*
500 +
$7.16
$3,580.00
*price indicative
Packaging Options:
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