- RS Stock No.:
- 178-4267
- Mfr. Part No.:
- FFSH20120A-F085
- Brand:
- onsemi
Discontinued product
- RS Stock No.:
- 178-4267
- Mfr. Part No.:
- FFSH20120A-F085
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers
Specifications
Attribute | Value |
---|---|
Mounting Type | Through Hole |
Package Type | TO-247 |
Maximum Continuous Forward Current | 30A |
Peak Reverse Repetitive Voltage | 1200V |
Diode Configuration | Single |
Diode Type | SiC Schottky |
Pin Count | 2 |
Number of Elements per Chip | 1 |
Diode Technology | Schottky |
Peak Non-Repetitive Forward Surge Current | 1.19kA |