IGBTs | Insulated Gate Bipolar Transistor | RS
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    IGBTs

    IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics, and many more.

    How do IGBT transistors work?

    IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure and are widely used for switching electrical power in applications, such as welding, electric cars, air conditioners, trains, and uninterruptible power supplies.

    What are the different types of IGBT Transistors?

    There are various types of IGBT transistors and they are categorised by different parameters, such as maximum voltage, collector current, packaging type, and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level and the applications being considered, and so it is important to know as many of your exact requirements as possible to choose the correct IGBT for your application.

    What is a difference between MOSFETs and IGBTs?

    An IGBT has a much lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFETs. They are highly efficient and fast switching, plus they have high current and low saturation voltage characteristics.

    What is a typical application of IGBTs?

    IGBTs are widely used in electronic applications, including: consumer electronics, industrial technology, transportation and electric motors, aerospace electronic devices, and applications within the energy sector.

    2460 Products showing for IGBTs

    ROHM
    105 A
    1200 V
    ±30V
    468 W
    1
    -
    TO-247N
    Through Hole
    -
    3
    -
    -
    -
    ROHM
    105 A
    1200 V
    ±30V
    468 W
    1
    -
    TO-247-4L
    Through Hole
    -
    4
    -
    -
    -
    ROHM
    105 A
    1200 V
    ±30V
    468 W
    1
    -
    TO-247N
    Through Hole
    -
    3
    -
    -
    -
    Infineon
    65 A
    650 V
    ±30V
    160 W
    -
    -
    PG-TO247-3
    -
    -
    3
    -
    -
    -
    Infineon
    450 A
    1200 V
    ±20V
    -
    2
    Single Collector, Single Emitter, Single Gate
    AG-62MMHB
    Through Hole
    N
    3
    -
    -
    -
    Infineon
    82 A
    1200 V
    ±20V
    115 W
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-4-STD-NT3.7
    Through Hole
    N
    4
    -
    -
    -
    Infineon
    120 A
    1200 V
    ±20V
    1 kW
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-3-PLUS-N
    Through Hole
    N
    3
    -
    -
    -
    Infineon
    120 A
    1200 V
    ±20V
    1 kW
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-3-PLUS-N
    Through Hole
    N
    3
    -
    -
    -
    Infineon
    75 A
    1200 V
    ±20V
    630 W
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-3-PLUS-N
    Through Hole
    N
    3
    -
    -
    -
    Infineon
    800 A
    1200 V
    ±20V
    -
    2
    Single Collector, Single Emitter, Single Gate
    AG-62MMHB
    Through Hole
    N
    3
    -
    -
    -
    Infineon
    120 A
    1200 V
    ±20V
    1 kW
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-3-PLUS-N
    Through Hole
    N
    3
    -
    -
    -
    Infineon
    -
    -
    -
    35.7 W
    -
    -
    PG-TO220-3
    -
    -
    -
    -
    -
    -
    onsemi
    80 A
    600 V
    ±20V
    290 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    15.6 x 4.7 x 20.6mm
    Vishay
    169 A
    1200 V
    ± 20V
    781 W
    1
    Single
    SOT-227
    Panel Mount
    N
    4
    -
    -
    -
    Infineon
    -
    -
    -
    105 W
    -
    -
    PG-TO263-3
    -
    -
    -
    -
    -
    -
    Infineon
    50 A
    1200 V
    ±20V
    285 W
    2
    Dual
    AG-34MM
    Chassis Mount
    -
    -
    -
    -
    -
    Infineon
    100 A
    1200 V
    ±20V
    824 W
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-3-PLUS-N
    Through Hole
    N
    3
    -
    -
    -
    Infineon
    160 A
    650 V
    ±20V
    498 W
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-3-PLUS-N
    Through Hole
    N
    3
    -
    -
    -
    Infineon
    225 A
    1200 V
    ±20V
    20 mW
    4
    Single Collector, Single Emitter, Single Gate
    AG-62MMHB
    Through Hole
    N
    -
    -
    -
    -
    Infineon
    80 A
    650 V
    ±20V
    208 W
    1
    Single Collector, Single Emitter, Single Gate
    PG-TO247-3-STD-NN4.8
    Through Hole
    N
    3
    -
    -
    -
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