JFETs

A JFET is a four-terminal device, the terminals are called the gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs and N-Channel P-Channel. FET stands for junction field-effect transistor. They can also be referred to as a JUGFET

N-Channel JFET Construction

The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

P-Channel JFET Construction

The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

Features and Benefits

  • High input impedance
  • Voltage-controlled device
  • A high degree of isolation between the input and the output
  • Less noise

What are JFET transistors used for?

JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.

What is the difference between a JFET and BJT (Bipolar Junction Transistor)?

The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carriers flow.

What is the doping of semiconductors?

Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.


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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 806-1757
Mfr. Part No.J112
$0.545
Each (In a Pack of 50)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 124-1385
Mfr. Part No.J112
$0.187
Each (In a Bag of 1000)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 761-3688
Mfr. Part No.MMBFJ201
$0.483
Each (In a Pack of 25)
units
N 0.3 to 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 166-1840
Mfr. Part No.MMBFJ201
$0.176
Each (On a Reel of 3000)
units
N 0.3 to 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 145-5347
Mfr. Part No.J113
$0.167
Each (In a Bag of 1000)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1766
Mfr. Part No.J113
$0.505
Each (In a Pack of 50)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 760-3126
Mfr. Part No.2SK209-Y(TE85L,F)
BrandToshiba
$0.691
Each (In a Pack of 10)
units
N 1.2 to 3.0mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 166-2910
Mfr. Part No.J111
$0.133
Each (In a Bag of 10000)
units
N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1753
Mfr. Part No.J111
$0.436
Each (In a Pack of 50)
units
N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 170-3357
Mfr. Part No.MMBFJ310LT1G
$0.197
Each (On a Reel of 3000)
units
N 24 to 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 773-7813
Mfr. Part No.MMBFJ310LT3G
$0.649
Each (In a Pack of 10)
units
N 24 to 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 625-5745
Mfr. Part No.MMBFJ310LT1G
$0.814
Each (In a Pack of 5)
units
N 24 to 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 162-9314
Mfr. Part No.CPH6904-TL-E
$0.445
Each (On a Reel of 3000)
units
N 20 to 40mA 25 V - -25V Dual Common Source - Surface Mount CPH 6 6pF 2.3pF 2.9 x 1.6 x 0.9mm
RS Stock No. 671-1141
Mfr. Part No.MMBFJ177
$0.492
Each (In a Pack of 5)
units
P 1.5 → 20mA - +30 V -30V Single Single 300 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 756-0350
Mfr. Part No.2SK3320-BL(TE85L,F
BrandToshiba
$1.174
Each (In a Pack of 5)
units
N 6 to 14mA 50 V -1.5 V -50V Dual Common Source - Surface Mount USV 5 13pF - 2 x 1.25 x 0.9mm
RS Stock No. 122-0136
Mfr. Part No.MMBFJ310LT3G
$0.185
Each (On a Reel of 10000)
units
N 24 to 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 166-0536
Mfr. Part No.BF513,215
BrandNXP
$0.458
Each (On a Reel of 3000)
units
N 10 to 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 760-3123
Mfr. Part No.2SK208-R(TE85L,F)
BrandToshiba
$0.676
Each (In a Pack of 10)
units
N 0.3 to 0.75mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 626-2311
Mfr. Part No.BF513,215
BrandNXP
$1.28
Each (In a Pack of 10)
units
N 10 to 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 791-9403
Mfr. Part No.CPH6904-TL-E
$0.944
Each (In a Pack of 10)
units
N 20 to 40mA 25 V - -25V Dual Common Source - Surface Mount CPH 6 6pF 2.3pF 2.9 x 1.6 x 0.9mm