MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Maximum Power Dissipation Automotive Standard
RS Stock No. 124-1694
Mfr. Part No.BSS138
$0.061
Each (On a Reel of 3000)
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N 220 mA 50 V 3.5 Ω 1.5V 0.8V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 360 mW -
RS Stock No. 671-0324
Mfr. Part No.BSS138
$0.449
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N 220 mA 50 V 3.5 Ω 1.5V 0.8V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 360 mW -
RS Stock No. 124-1745
Mfr. Part No.BS170
$0.133
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N 500 mA 60 V 5 Ω 3V 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement 830 mW -
RS Stock No. 166-2179
Mfr. Part No.FDA24N40F
$3.697
Each (In a Tube of 30)
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N 23 A 400 V 190 mΩ - 3V -30 V, +30 V TO-3PN Through Hole 3 Single Enhancement 235 W -
RS Stock No. 903-4134
Mfr. Part No.FDA24N40F
$4.34
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N 23 A 400 V 190 mΩ - 3V -30 V, +30 V TO-3PN Through Hole 3 Single Enhancement 235 W -
RS Stock No. 671-4736
Mfr. Part No.BS170
$0.598
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N 500 mA 60 V 5 Ω 3V 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement 830 mW -
RS Stock No. 163-1136
Mfr. Part No.NTMS4816NR2G
$0.477
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N 11 A 30 V 16 mΩ 3V - -20 V, +20 V SOIC Surface Mount 8 Single Enhancement 2.04 W -
RS Stock No. 124-1400
Mfr. Part No.FQP30N06L
$1.251
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N 32 A 60 V 45 mΩ - 1V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement 79 W -
RS Stock No. 807-5863
Mfr. Part No.FQP30N06L
$2.098
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N 32 A 60 V 45 mΩ - 1V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement 79 W -
RS Stock No. 780-4727
Mfr. Part No.NTMS4816NR2G
$0.675
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N 11 A 30 V 16 mΩ 3V - -20 V, +20 V SOIC Surface Mount 8 Single Enhancement 2.04 W -
RS Stock No. 145-5555
Mfr. Part No.MTP3055VL
$0.951
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N 12 A 60 V 180 mΩ - 1V -15 V, +15 V TO-220 Through Hole 3 Single Enhancement 48 W -
RS Stock No. 671-0769
Mfr. Part No.FDS9926A
$0.902
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N 6.5 A 20 V 30 mΩ - 0.6V -10 V, +10 V SOIC Surface Mount 8 Isolated Enhancement 2 W -
RS Stock No. 761-4542
Mfr. Part No.MTP3055VL
$2.224
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N 12 A 60 V 180 mΩ - 1V -15 V, +15 V TO-220 Through Hole 3 Single Enhancement 48 W -
RS Stock No. 166-2631
Mfr. Part No.FDS9926A
$0.511
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N 6.5 A 20 V 30 mΩ - 0.6V -10 V, +10 V SOIC Surface Mount 8 Isolated Enhancement 2 W -
RS Stock No. 124-1349
Mfr. Part No.BUZ11_NR4941
$1.634
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N 30 A 50 V 40 mΩ - 2.1V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 75 W -
RS Stock No. 671-0429
Mfr. Part No.FDN337N
$0.648
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N 2.2 A 30 V 65 mΩ 1V 0.4V -8 V, +8 V SOT-23 Surface Mount 3 Single Enhancement 500 mW -
RS Stock No. 761-3515
Mfr. Part No.BUZ11-NR4941
$2.614
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N 30 A 50 V 40 mΩ - 2.1V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 75 W -
RS Stock No. 124-1703
Mfr. Part No.FDN337N
$0.193
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N 2.2 A 30 V 65 mΩ 1V 0.4V -8 V, +8 V SOT-23 Surface Mount 3 Single Enhancement 500 mW -
RS Stock No. 671-5095
Mfr. Part No.FQP33N10
$2.428
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N 33 A 100 V 52 mΩ - 2V -25 V, +25 V TO-220AB Through Hole 3 Single Enhancement 127 W -
RS Stock No. 145-4526
Mfr. Part No.FQP33N10
$0.968
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N 33 A 100 V 52 mΩ - 2V -25 V, +25 V TO-220AB Through Hole 3 Single Enhancement 127 W -