toshiba mosfets
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    Toshiba MOSFETs

    355 Products showing for Toshiba MOSFETs

    Toshiba
    N
    1 A
    7.5 V
    -
    SC-62
    -
    Surface Mount
    3
    +3 V
    Enhancement
    1.45V
    -
    3 W
    -
    Single
    4.6mm
    +150 °C
    1
    Si
    -
    2.5mm
    Toshiba
    N
    6 A
    650 V
    1.11 Ω
    SC-67
    TK
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    4V
    -
    45 W
    -
    Single
    10mm
    +150 °C
    1
    Si
    20 nC @ 10 V
    4.5mm
    Toshiba
    N
    5 A
    500 V
    1.5 Ω
    TO-220SIS
    -
    Through Hole
    3
    +30 V
    Enhancement
    4.4V
    2.4V
    35 W @ 25 °C
    -
    Single
    10mm
    +150 °C
    1
    Si
    11 nC @ 10 V
    4.5mm
    Toshiba
    N
    5 A
    900 V
    2.5 Ω
    TO-3PN
    2SK
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    4V
    -
    150 W
    -
    Single
    15.9mm
    +150 °C
    1
    Si
    28 nC @ 10 V
    4.8mm
    Toshiba
    N
    7 A
    600 V
    650 mΩ
    TO-220SIS
    DTMOSIV
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    4.5V
    3V
    30 W
    -
    -
    10mm
    +150 °C
    1
    Si
    16 nC @ 10 V
    4.5mm
    Toshiba
    P
    2.5 A
    200 V
    2 Ω
    PW Mold2
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    3.5V
    -
    20 W
    -
    Single
    6.5mm
    +150 °C
    1
    Si
    10 nC @ 10 V
    2.3mm
    Toshiba
    N
    7 A
    600 V
    600 mΩ
    IPAK (TO-251)
    DTMOSIV
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    3.7V
    2.7V
    60 W
    -
    -
    6.65mm
    +150 °C
    1
    Si
    15 nC @ 10 V
    2.3mm
    Toshiba
    N
    60 A
    120 V
    13.8 mΩ
    TO-220SIS
    TK
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    -
    30 W
    -
    Single
    10mm
    +150 °C
    1
    Si
    34 nC @ 10 V
    4.5mm
    Toshiba
    N
    5 A
    60 V
    100 mΩ
    PW Mold2
    2SK
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    2.5V
    -
    20 W
    -
    Single
    6.5mm
    +150 °C
    1
    Si
    15 nC @ 10 V
    2.3mm
    Toshiba
    N
    43 A
    60 V
    15 mΩ
    TO-220SIS
    TK
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    -
    25 W
    -
    Single
    10mm
    +150 °C
    1
    Si
    16 nC @ 10 V
    4.5mm
    Toshiba
    N
    30 A
    60 V
    15 mΩ
    TO-220SIS
    TK
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    -
    25 W
    -
    Single
    10mm
    +150 °C
    1
    Si
    16 nC @ 10 V
    4.5mm
    Toshiba
    N
    1 A
    30 V
    -
    PW Mini
    2SK
    Surface Mount
    3
    +25 V
    Enhancement
    2.4V
    -
    3 W
    -
    Single
    4.6mm
    +150 °C
    1
    Si
    -
    2.5mm
    Toshiba
    N
    105 A
    60 V
    5.4 mΩ
    TO-220
    TK
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    -
    110 W
    -
    Single
    10.16mm
    +150 °C
    1
    Si
    46 nC @ 10 V
    4.45mm
    Toshiba
    N
    39 A
    600 V
    74 mΩ
    TO-3PN
    TK
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    3.7V
    -
    270 W
    -
    Single
    15.5mm
    +150 °C
    1
    Si
    135 nC @ 10 V
    4.5mm
    Toshiba
    N
    207 A
    100 V
    3.4 mΩ
    TO-220
    TK
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    -
    255 W
    -
    Single
    10.16mm
    +150 °C
    1
    Si
    140 nC @ 10 V
    4.45mm
    Toshiba
    N
    4.5 A
    600 V
    950 mΩ
    TO-220SIS
    DTMOSIV
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    4.5V
    3V
    30 W
    -
    -
    10mm
    +150 °C
    1
    Si
    11.5 nC @ 10 V
    4.5mm
    Toshiba
    N
    5 A
    900 V
    2.5 Ω
    SC-67
    2SK
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    4V
    -
    45 W
    -
    Single
    10mm
    +150 °C
    1
    Si
    28 nC @ 10 V
    4.5mm
    Toshiba
    N
    20 A
    600 V
    175 mΩ
    TO-220SIS
    TK
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    3.7V
    -
    45 W
    -
    Single
    10mm
    +150 °C
    1
    Si
    55 nC @ 10 V
    4.5mm
    Toshiba
    N
    100 A
    600 V
    18 mΩ
    TO-3PL
    DTMOSIV
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    3.7V
    -
    797 W
    -
    Single
    20mm
    +150 °C
    1
    Si
    360 nC @ 10 V
    5mm
    Toshiba
    N
    30.8 A
    600 V
    99 mΩ
    TO-247
    DTMOSIV
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    4.5V
    3V
    230 W
    -
    -
    15.94mm
    +150 °C
    1
    Si
    105 nC @ 10 V
    5.02mm
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