Microchip AT28HC64BF-12SU, 64 kB Parallel EEPROM, 120 ns 28-Pin SOIC Parallel
- RS Stock No.:
- 177-1673P
- Mfr. Part No.:
- AT28HC64BF-12SU
- Brand:
- Microchip
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Units | Per unit |
|---|---|
| 8 - 12 | $11.21 |
| 14 + | $11.06 |
*price indicative
- RS Stock No.:
- 177-1673P
- Mfr. Part No.:
- AT28HC64BF-12SU
- Brand:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Parallel EEPROM | |
| Memory Size | 64kB | |
| Interface Type | Parallel | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 28 | |
| Maximum Clock Frequency | 5MHz | |
| Organisation | 8K x 8 bit | |
| Minimum Supply Voltage | 4.5V | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Height | 2.8mm | |
| Standards/Approvals | No | |
| Width | 10.3mm | |
| Series | AT28HC64BF | |
| Length | 17.9mm | |
| Maximum Random Access Time | 120ns | |
| Number of Words | 8192 | |
| Supply Current | 40mA | |
| Data Retention | 10year | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Parallel EEPROM | ||
Memory Size 64kB | ||
Interface Type Parallel | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 28 | ||
Maximum Clock Frequency 5MHz | ||
Organisation 8K x 8 bit | ||
Minimum Supply Voltage 4.5V | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Height 2.8mm | ||
Standards/Approvals No | ||
Width 10.3mm | ||
Series AT28HC64BF | ||
Length 17.9mm | ||
Maximum Random Access Time 120ns | ||
Number of Words 8192 | ||
Supply Current 40mA | ||
Data Retention 10year | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Additional Features:
8 Kbits x 8 (64 Kbit)
5 V ±10% Supply
Parallel Interface
70ns access time Self-Timed Erase and Write Cycles
Page Write and Byte Write
Data Polling for end of write detection
2 ms Maximum Option
Low Power Consumption:
Read / Write current 40 mA (Max)
Standby current TTL 2 mA (Max), CMOS 100 μA (Max)
Write-Protection
Hardware Protection
Software Data Protect
More than 100,000 erase/write cycles
Data retention > 10 years
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