Infineon 4Mbit SPI FRAM Memory 8-Pin SOIC, CY15B104Q-SXI
- RS Stock No.:
- 188-5304
- Mfr. Part No.:
- CY15B104Q-SXI
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 94 units)*
$4,107.706
(exc. GST)
$4,723.876
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- Plus 658 unit(s) shipping from 08 December 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 94 - 94 | $43.699 | $4,107.71 |
| 188 - 282 | $42.606 | $4,004.96 |
| 376 + | $41.951 | $3,943.39 |
*price indicative
- RS Stock No.:
- 188-5304
- Mfr. Part No.:
- CY15B104Q-SXI
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4Mbit | |
| Organisation | 512k x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 5.33 x 5.33 x 1.78mm | |
| Length | 5.33mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 5.33mm | |
| Height | 1.78mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2 V | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 512k | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4Mbit | ||
Organisation 512k x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 5.33 x 5.33 x 1.78mm | ||
Length 5.33mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 5.33mm | ||
Height 1.78mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2 V | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 512k | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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- Infineon 4Mbit Serial-SPI FRAM Memory 8-Pin GQFN, CY15V104QI-20LPXC
- Infineon 4Mbit Serial-SPI FRAM Memory 8-Pin GQFN, CY15V104QN-20LPXI
- Infineon 64kbit Serial-SPI FRAM Memory 8-Pin SOIC, CY15B064Q-SXE
