Infineon 256 kB Serial-SPI Serial (SPI) F-RAM 8-Pin, FM25V02A-G
- RS Stock No.:
- 273-7389
- Mfr. Part No.:
- FM25V02A-G
- Brand:
- Infineon
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$9.36
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$10.76
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In Stock
- 909 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | $9.36 |
| 10 - 24 | $8.47 |
| 25 - 49 | $8.28 |
| 50 - 99 | $8.13 |
| 100 + | $7.54 |
*price indicative
- RS Stock No.:
- 273-7389
- Mfr. Part No.:
- FM25V02A-G
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Serial (SPI) F-RAM | |
| Memory Size | 256kB | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 40MHz | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2V | |
| Minimum Operating Temperature | -40°C | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 3.6V | |
| Number of Words | 32k | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Serial (SPI) F-RAM | ||
Memory Size 256kB | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 40MHz | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2V | ||
Minimum Operating Temperature -40°C | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 3.6V | ||
Number of Words 32k | ||
Automotive Standard No | ||
The Infineon FRAM is a 256 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
Related links
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