STMicroelectronics L6385ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17 V, SO-8
- RS Stock No.:
- 152-011
- Mfr. Part No.:
- L6385ED013TR
- Brand:
- STMicroelectronics
This image is representative of the product range
Subtotal (1 reel of 2500 units)*
$4,690.00
(exc. GST)
$5,392.50
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 12 August 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | $1.876 | $4,690.00 |
*price indicative
- RS Stock No.:
- 152-011
- Mfr. Part No.:
- L6385ED013TR
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Fall Time | 30ns | |
| Package Type | SO-8 | |
| Number of Outputs | 2 | |
| Driver Type | High Side | |
| Rise Time | 50ns | |
| Minimum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 17V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Series | L6385ED013TR | |
| Standards/Approvals | RoHS Compliant | |
| Mount Type | Surface | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Fall Time 30ns | ||
Package Type SO-8 | ||
Number of Outputs 2 | ||
Driver Type High Side | ||
Rise Time 50ns | ||
Minimum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 17V | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Series L6385ED013TR | ||
Standards/Approvals RoHS Compliant | ||
Mount Type Surface | ||
- COO (Country of Origin):
- CN
The STMicroelectronics simple and Compact high voltage gate driver, manufactured with the BCD offline technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical half bridge configurations.
Undervoltage lockout on lower and upper driving section
Internal bootstrap diode
Outputs in phase with inputs
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