onsemi NCP51152BADR2G, Isolated Gate Driver 1, 9 A 8-Pin 20 V, SOIC-8
- RS Stock No.:
- 277-081
- Mfr. Part No.:
- NCP51152BADR2G
- Brand:
- onsemi
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Subtotal (1 tape of 5 units)*
$20.57
(exc. GST)
$23.655
(inc. GST)
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Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | $4.114 | $20.57 |
| 50 - 95 | $3.91 | $19.55 |
| 100 - 495 | $3.624 | $18.12 |
| 500 - 995 | $3.334 | $16.67 |
| 1000 + | $3.214 | $16.07 |
*price indicative
- RS Stock No.:
- 277-081
- Mfr. Part No.:
- NCP51152BADR2G
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Gate Driver Module | |
| Output Current | 9A | |
| Pin Count | 8 | |
| Fall Time | 8.3ns | |
| Package Type | SOIC-8 | |
| Driver Type | Isolated Gate Driver | |
| Rise Time | 12ns | |
| Minimum Supply Voltage | 3V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | NCP51152 | |
| Width | 4 mm | |
| Standards/Approvals | CQC GB4943.1-2011 (Planned), UL1577 (Planned), AEC-Q100-002, SGS FIMO IEC 62386-1 (Planned) | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Gate Driver Module | ||
Output Current 9A | ||
Pin Count 8 | ||
Fall Time 8.3ns | ||
Package Type SOIC-8 | ||
Driver Type Isolated Gate Driver | ||
Rise Time 12ns | ||
Minimum Supply Voltage 3V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series NCP51152 | ||
Width 4 mm | ||
Standards/Approvals CQC GB4943.1-2011 (Planned), UL1577 (Planned), AEC-Q100-002, SGS FIMO IEC 62386-1 (Planned) | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Isolated Single Channel Gate Driver features 4.5A/9A source and sink peak currents, designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. It comes in a compact 4 mm SOIC-8 package and supports isolation voltages up to 3.75 kVRMS. Additionally, it includes essential protection functions, such as independent under-voltage lockout for both side drivers, ensuring reliable and safe operation in high-performance power applications.
Gate clamping during short circuit
200 V/ns dV/dt immunity
Negative 5−V handling capability on input pins
SGS FIMO certification per IEC 62386−1
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