Infineon MOSFET Gate Driver 2, 290 mA 8-Pin 25 V, DSO

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Subtotal (1 reel of 2500 units)*

$2,760.00

(exc. GST)

$3,175.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 10000$1.104$2,760.00
12500 +$0.994$2,485.00

*price indicative

RS Stock No.:
226-6021
Mfr. Part No.:
2ED2109S06FXUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

High Speed Power MOSFET & IGBT Driver

Output Current

290mA

Pin Count

8

Fall Time

80ns

Package Type

DSO

Number of Outputs

2

Driver Type

MOSFET

Rise Time

150ns

Minimum Supply Voltage

20V

Number of Drivers

2

Maximum Supply Voltage

25V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Height

1.72mm

Standards/Approvals

JEDEC47/20/22

Width

3.9 mm

Length

4.9mm

Series

2ED2109 (4) S06F (J)

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2109S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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