Infineon 1EDI3030ASXUMA1 Gate Driver 1, 20 A 20-Pin 5.5 V, DSO
- RS Stock No.:
- 232-3033
- Mfr. Part No.:
- 1EDI3030ASXUMA1
- Brand:
- Infineon
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$9.47
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$10.89
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In Stock
- 905 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | $9.47 |
| 10 - 99 | $9.27 |
| 100 - 249 | $9.11 |
| 250 - 499 | $8.92 |
| 500 + | $8.76 |
*price indicative
- RS Stock No.:
- 232-3033
- Mfr. Part No.:
- 1EDI3030ASXUMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | General Purpose Driver | |
| Output Current | 20A | |
| Pin Count | 20 | |
| Fall Time | 45ns | |
| Package Type | DSO | |
| Number of Outputs | 4 | |
| Driver Type | General Purpose | |
| Rise Time | 55ns | |
| Minimum Supply Voltage | 5.5V | |
| Maximum Supply Voltage | 5.5V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.65mm | |
| Length | 7.5mm | |
| Width | 6.4 mm | |
| Series | 1EDI3030AS | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type General Purpose Driver | ||
Output Current 20A | ||
Pin Count 20 | ||
Fall Time 45ns | ||
Package Type DSO | ||
Number of Outputs 4 | ||
Driver Type General Purpose | ||
Rise Time 55ns | ||
Minimum Supply Voltage 5.5V | ||
Maximum Supply Voltage 5.5V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.65mm | ||
Length 7.5mm | ||
Width 6.4 mm | ||
Series 1EDI3030AS | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The Infineon has automotive qualified single channel high voltage gate driver optimized for SiC MOSFET. The 1EDI3030AS uses robust Infineon coreless transformer technology to provide bi-directional signal transfer across the galvanic isolation barrier. The compact package design and high level of feature integration save valuable PCB space and system cost, while pre-configured settings reduce design efforts.
For SiC-MOSFETs up to 1200 V
Propagation delay 60 ns typical
Redundant DESAT and OCP protection
Gate and output stage monitoring
Related links
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