Infineon 2ED2101S06FXUMA1 Gate Driver, 290 mA 8-Pin 20 V, DSO
- RS Stock No.:
- 236-3631
- Mfr. Part No.:
- 2ED2101S06FXUMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
$14.98
(exc. GST)
$17.23
(inc. GST)
FREE delivery for orders over $60.00 ex GST
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | $1.498 | $14.98 |
| 20 - 90 | $1.452 | $14.52 |
| 100 - 240 | $1.408 | $14.08 |
| 250 - 490 | $1.366 | $13.66 |
| 500 + | $1.324 | $13.24 |
*price indicative
- RS Stock No.:
- 236-3631
- Mfr. Part No.:
- 2ED2101S06FXUMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | General Purpose Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Package Type | DSO | |
| Fall Time | 35ns | |
| Driver Type | General Purpose | |
| Rise Time | 170ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | 2ED | |
| Standards/Approvals | JEDEC47/20/22 | |
| Mount Type | Board | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type General Purpose Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Package Type DSO | ||
Fall Time 35ns | ||
Driver Type General Purpose | ||
Rise Time 170ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series 2ED | ||
Standards/Approvals JEDEC47/20/22 | ||
Mount Type Board | ||
Automotive Standard AEC-Q100 | ||
The Infineon high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It provides excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages. With no parasitic Thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Integrated ultra-fast, low resistance bootstrap diode
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
50% lower level-shift losses
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