Infineon 1EDN7116GXTMA1 MOSFET Gate Driver, 2 A 11-Pin 11 V, PG-VSON-10

This image is representative of the product range

View all Gate Drivers
Bulk discount available

Subtotal (1 pack of 5 units)*

$4.81

(exc. GST)

$5.53

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 3,815 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 5$0.962$4.81
10 - 95$0.94$4.70
100 - 245$0.916$4.58
250 - 495$0.894$4.47
500 +$0.872$4.36

*price indicative

Packaging Options:
RS Stock No.:
240-8518
Mfr. Part No.:
1EDN7116GXTMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Output Current

2A

Pin Count

11

Package Type

PG-VSON-10

Fall Time

3ns

Driver Type

MOSFET

Minimum Supply Voltage

11V

Maximum Supply Voltage

11V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Automotive Standard

No

The Infineon EiceDRIVER™ 1EDN7116G is a single-channel gate-driver IC optimized for compatibility with CoolGaN™ HEMTs, and it is also compatible with other Schottky Gate (SG) GaN HEMTs and Silicon MOSFETs, Thanks to the truly differential input (TDI) feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, completely independent of the driver’s reference (ground) potential as long as the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN7116G to address even high-side applications.

Avoid false triggering in low-side or high-side operation

High common-mode input voltage range for high side operation

Robust operation during fast switching transients

Compatible with 3.3 V or 5 V input logic

Active Miller clamp with 5 A sink capability to avoid induced turn-on

Adjustable charge pump for negative turn-off supply voltage

Suitable for driving GaN HEMTs or Si MOSFETs

Qualified according to JEDEC for target applications

Related links