onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

$287.19

(exc. GST)

$330.27

(inc. GST)

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Temporarily out of stock
  • 450 unit(s) shipping from 01 April 2026
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Units
Per unit
Per Tube*
30 - 30$9.573$287.19
60 - 90$9.334$280.02
120 +$9.19$275.70

*price indicative

RS Stock No.:
124-1446
Mfr. Part No.:
FGH40T120SMD
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

555 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Discrete IGBTs, 1000V and over, Fairchild Semiconductor


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IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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