onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

$16.14

(exc. GST)

$18.56

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 7 unit(s) ready to ship from another location
  • Plus 450 unit(s) shipping from 01 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 7$16.14
8 - 14$15.74
15 +$15.52

*price indicative

Packaging Options:
RS Stock No.:
864-8855
Mfr. Part No.:
FGH40T120SMD
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

555 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Discrete IGBTs, 1000V and over, Fairchild Semiconductor


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links