IXYS IXGN320N60A3 Single IGBT Module, 320 A 600 V, 4-Pin SOT-227B, Surface Mount
- RS Stock No.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Brand:
- IXYS
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Subtotal (1 unit)*
$76.71
(exc. GST)
$88.22
(inc. GST)
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In Stock
- Plus 12 unit(s) shipping from 17 December 2025
- Plus 19 unit(s) shipping from 24 December 2025
- Plus 300 unit(s) shipping from 21 August 2026
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Units | Per unit |
|---|---|
| 1 - 2 | $76.71 |
| 3 - 4 | $75.71 |
| 5 + | $74.14 |
*price indicative
- RS Stock No.:
- 125-8046
- Mfr. Part No.:
- IXGN320N60A3
- Brand:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 320 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 735 W | |
| Package Type | SOT-227B | |
| Configuration | Single | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 4 | |
| Switching Speed | 5kHz | |
| Transistor Configuration | Common Emitter | |
| Dimensions | 38.23 x 25.07 x 9.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 320 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 735 W | ||
Package Type SOT-227B | ||
Configuration Single | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 4 | ||
Switching Speed 5kHz | ||
Transistor Configuration Common Emitter | ||
Dimensions 38.23 x 25.07 x 9.6mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, IXYS
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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