Infineon IKW30N65ES5XKSA1 IGBT, 62 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 10 units)*

$78.47

(exc. GST)

$90.24

(inc. GST)

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Per Pack*
10 - 10$7.847$78.47
20 - 20$7.649$76.49
30 +$7.546$75.46

*price indicative

RS Stock No.:
144-1201
Mfr. Part No.:
IKW30N65ES5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

62 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30V

Maximum Power Dissipation

188 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

30kHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Gate Capacitance

1800pF

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Energy Rating

0.88mJ

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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