onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

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Subtotal (1 tube of 30 units)*

$132.27

(exc. GST)

$152.10

(inc. GST)

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Last RS stock
  • Final 660 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
30 - 30$4.409$132.27
60 - 90$4.30$129.00
120 +$4.233$126.99

*price indicative

RS Stock No.:
145-4338
Mfr. Part No.:
FGAF40N60UFTU
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

100 W

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 5.5 x 26.5mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN

Discrete IGBTs, Fairchild Semiconductor


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IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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