onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

$7.88

(exc. GST)

$9.06

(inc. GST)

Add to Basket
Select or type quantity
Last RS stock
  • 2 left, ready to ship from another location
  • Final 662 unit(s) shipping from 25 December 2025
Units
Per unit
1 - 7$7.88
8 - 39$7.74
40 +$6.38

*price indicative

Packaging Options:
RS Stock No.:
759-9257
Mfr. Part No.:
FGAF40N60UFTU
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

100 W

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 5.5 x 26.5mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Discrete IGBTs, Fairchild Semiconductor


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links